Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis
Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging do** technologies enabled by low temperature, non-equilibrium …
facilitated by emerging do** technologies enabled by low temperature, non-equilibrium …
[HTML][HTML] Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
A Knauer, T Kolbe, S Hagedorn, J Hoepfner… - Applied Physics …, 2023 - pubs.aip.org
High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
constant compared to conventional non-annealed AlN/sapphire grown by metalorganic …
High-temperature annealing assisted high-quality semipolar (1122) AlN film for vacuum ultraviolet detectors
Y Gao, J Yang, L Wang, Y Duo, Z Huo… - Crystal Growth & …, 2023 - ACS Publications
High-temperature annealing (HTA) has been recognized as an available method to
annihilate the domain boundaries and improve the crystalline quality of AlN films. Here …
annihilate the domain boundaries and improve the crystalline quality of AlN films. Here …
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
Recovery of epitaxial AlN films on sapphire at high temperatures is now an established
process to produce pseudo-substrates with high crystalline perfection, which can be used to …
process to produce pseudo-substrates with high crystalline perfection, which can be used to …
[HTML][HTML] Impact of Si do** on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
In this work, we compare the defect structure in unintentionally doped and Si-doped AlN
layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed …
layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed …
Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE
L **e, H Zhang, X **e, E Wang, X Lin, Y Song… - Materials Science in …, 2022 - Elsevier
Herein, a novel process of substrate pretreatment and high temperature annealing for
elementary source vapor phase epitaxy (EVPE) is shown to be capable of optimizing the …
elementary source vapor phase epitaxy (EVPE) is shown to be capable of optimizing the …
Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition
Structural and optical properties of AlN films grown on c-sapphire by metalorganic chemical
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …
Optical Centers in Cr-, Mn-, and O-Doped AlN and Their Thermodynamic Stability Designed by a Multiscale Computational Approach
The optical centers in AlN can frequently exist in various charge states and can be
accompanied by many coexisting defect species, creating a complex environment where …
accompanied by many coexisting defect species, creating a complex environment where …
Improved Crystallinity of Annealed 0002 AlN Films on Sapphire Substrate
BC Bersch, T Caminal Ros, V Tollefsen… - Materials, 2023 - mdpi.com
AlN is a piezoelectric material used in telecommunication applications due to its high
surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is …
surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is …
[HTML][HTML] Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing
The structural recovery of AlN grown by reactive sputtering on a sapphire substrate during
high-temperature annealing is studied by means of transmission electron microscopy and …
high-temperature annealing is studied by means of transmission electron microscopy and …