Graphene photodetectors with a bandwidth> 76 GHz fabricated in a 6 ″wafer process line
D Schall, C Porschatis, M Otto… - Journal of Physics D …, 2017 - iopscience.iop.org
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge
market that could be addressed by communication infrastructure and service providers …
market that could be addressed by communication infrastructure and service providers …
Nanoprocessing of self-suspended monolayer graphene and defect formation by femtosecond-laser irradiation
N Kadoguchi, Y Uesugi, M Nagasako, T Kobayashi… - Nano Letters, 2023 - ACS Publications
We demonstrate the femtosecond-laser processing of self-suspended monolayer graphene
grown by chemical vapor deposition, resulting in multipoint drilling with holes having a …
grown by chemical vapor deposition, resulting in multipoint drilling with holes having a …
High performance metal–insulator–graphene diodes for radio frequency power detection application
Vertical metal–insulator–graphene (MIG) diodes for radio frequency (RF) power detection
are realized using a scalable approach based on graphene grown by chemical vapor …
are realized using a scalable approach based on graphene grown by chemical vapor …
Catalyst interface engineering for improved 2D film lift-off and transfer
The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron
nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) …
nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) …
Low resistive edge contacts to CVD‐grown graphene using a CMOS compatible metal
The exploitation of the excellent intrinsic electronic properties of graphene for device
applications is hampered by a large contact resistance between the metal and graphene …
applications is hampered by a large contact resistance between the metal and graphene …
The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties
This paper addresses the high-frequency performance limitations of graphene field-effect
transistors (GFETs) caused by material imperfections. To understand these limitations, we …
transistors (GFETs) caused by material imperfections. To understand these limitations, we …
Sha** metallic nanolattices: design by microcontact printing from wrinkled stamps
A method for the fabrication of well‐defined metallic nanostructures is presented here in a
simple and straightforward fashion. As an alternative to lithographic techniques, this routine …
simple and straightforward fashion. As an alternative to lithographic techniques, this routine …
Effect of fabrication process on contact resistance and channel in graphene field effect transistors
B Khosravi Rad, AH Mehrfar, Z Sadeghi Neisiani… - Scientific Reports, 2024 - nature.com
Contact resistance, as one of the main parameters that limits the performance of graphene-
based transistors, is highly dependent on the metal-graphene contact fabrication processes …
based transistors, is highly dependent on the metal-graphene contact fabrication processes …
Graphene devices with bottom-up contacts by area-selective atomic layer deposition
Graphene field-effect transistor devices were fabricated using a bottom-up and resist-free
method, avoiding common compatibility issues such as contamination by resist residues …
method, avoiding common compatibility issues such as contamination by resist residues …
[HTML][HTML] Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography
The development of a scalable and cost-effective nanofabrication method is of key
importance for future advances in nanoelectronics. Thermal scanning probe lithography (t …
importance for future advances in nanoelectronics. Thermal scanning probe lithography (t …