Graphene photodetectors with a bandwidth> 76 GHz fabricated in a 6 ″wafer process line

D Schall, C Porschatis, M Otto… - Journal of Physics D …, 2017 - iopscience.iop.org
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge
market that could be addressed by communication infrastructure and service providers …

Nanoprocessing of self-suspended monolayer graphene and defect formation by femtosecond-laser irradiation

N Kadoguchi, Y Uesugi, M Nagasako, T Kobayashi… - Nano Letters, 2023 - ACS Publications
We demonstrate the femtosecond-laser processing of self-suspended monolayer graphene
grown by chemical vapor deposition, resulting in multipoint drilling with holes having a …

High performance metal–insulator–graphene diodes for radio frequency power detection application

M Shaygan, Z Wang, MS Elsayed, M Otto… - Nanoscale, 2017 - pubs.rsc.org
Vertical metal–insulator–graphene (MIG) diodes for radio frequency (RF) power detection
are realized using a scalable approach based on graphene grown by chemical vapor …

Catalyst interface engineering for improved 2D film lift-off and transfer

R Wang, PR Whelan… - … Applied Materials & …, 2016 - ACS Publications
The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron
nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) …

Low resistive edge contacts to CVD‐grown graphene using a CMOS compatible metal

M Shaygan, M Otto, AA Sagade… - Annalen der …, 2017 - Wiley Online Library
The exploitation of the excellent intrinsic electronic properties of graphene for device
applications is hampered by a large contact resistance between the metal and graphene …

The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties

M Asad, M Bonmann, X Yang… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This paper addresses the high-frequency performance limitations of graphene field-effect
transistors (GFETs) caused by material imperfections. To understand these limitations, we …

Sha** metallic nanolattices: design by microcontact printing from wrinkled stamps

X Wang, M Sperling, M Reifarth, A Böker - Small, 2020 - Wiley Online Library
A method for the fabrication of well‐defined metallic nanostructures is presented here in a
simple and straightforward fashion. As an alternative to lithographic techniques, this routine …

Effect of fabrication process on contact resistance and channel in graphene field effect transistors

B Khosravi Rad, AH Mehrfar, Z Sadeghi Neisiani… - Scientific Reports, 2024 - nature.com
Contact resistance, as one of the main parameters that limits the performance of graphene-
based transistors, is highly dependent on the metal-graphene contact fabrication processes …

Graphene devices with bottom-up contacts by area-selective atomic layer deposition

NFW Thissen, RHJ Vervuurt, AJM Mackus… - 2D …, 2017 - iopscience.iop.org
Graphene field-effect transistor devices were fabricated using a bottom-up and resist-free
method, avoiding common compatibility issues such as contamination by resist residues …

[HTML][HTML] Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography

X Liu, Z Huang, X Zheng, D Shahrjerdi, E Riedo - APL Materials, 2021 - pubs.aip.org
The development of a scalable and cost-effective nanofabrication method is of key
importance for future advances in nanoelectronics. Thermal scanning probe lithography (t …