III–V nanowire transistors for low-power logic applications: a review and outlook
III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …
been considered as promising candidates for n-channel materials for post-Si low-power …
Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer
In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires
Although various device structures based on GaSb nanowires have been realized, further
performance enhancement suffers from uncontrolled radial growth during the nanowire …
performance enhancement suffers from uncontrolled radial growth during the nanowire …
Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth
Gallium arsenide (GaAs) is an important compound semiconductor for optoelectronic
devices. However, the fast nonradiative recombination velocity of GaAs requires surface …
devices. However, the fast nonradiative recombination velocity of GaAs requires surface …
High-performance inas nanowire mosfets
In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off
characteristics. An nin do** profile was used to reduce the source and drain resistances …
characteristics. An nin do** profile was used to reduce the source and drain resistances …
Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces
T Gougousi - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization
Chemical functionalization is demonstrated to enhance the p-type electrical performance of
two-dimensional (2D) layered tungsten diselenide (WSe2) field-effect transistors (FETs) …
two-dimensional (2D) layered tungsten diselenide (WSe2) field-effect transistors (FETs) …
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
We investigated the effect of forming gas (5% H 2/95% N 2) annealing on surface-channel In
0.53 Ga 0.47 As MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. We …
0.53 Ga 0.47 As MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. We …
Photoresponse Improvement of InGaAs Nanowire Near-Infrared Photodetectors with Self-Assembled Monolayers
L Shen, H Qian, Y Yang, Y Ma, J Deng… - The Journal of Physical …, 2023 - ACS Publications
InGaAs nanowires (NWs) show tremendous potential as channel materials in the field of
near-infrared photoelectric detections. However, the abundance of surface states on InGaAs …
near-infrared photoelectric detections. However, the abundance of surface states on InGaAs …