Reconfigurable field‐effect transistors, capable of being dynamically programmed during
run‐time, overcome the static nature of conventional complementary metal‐oxide …

The thermal stability of GeSn epitaxial thin films was investigated via in situ transmission
electron microscopy (TEM). Samples were grown with a similar layer structure and 10 at …

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality
and performance to next-generation nanoelectronics and solid-state quantum transport …

Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time
switching between n-and p-type operation with enhanced performance compared to state-of …

We report on electroluminescence spectroscopy experiments demonstrating room-
temperature light emission from heavily alloyed SiGe quantum dots, for which the light …

We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge 1− x
Sn x channel devices with various Sn concentrations between 0.5% and 4%. Thereby we …

Integrating Ge onto SOI should enhance the drive currents and switching speeds of
transistors. However, Ge on insulator platforms have fallen short of providing these benefits …

We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge1−
𝑥Sn𝑥 channel devices with various Sn concentrations between 0. 5% and 4%. Thereby we …

Over the recent decades, heteroepitaxial layers comprising crystalline stacks of Group-IV
alloys, predominantly SiGe, have been employed to enhance the operational efficiency of …

Reconfigurable field effect transistors (RFET) merge the functionality of p-and n-type field
effect transistors at runtime upon the application of a dedicated control voltage. More …