Heterointerface engineering in electromagnetic absorbers: new insights and opportunities
L Liang, W Gu, Y Wu, B Zhang, G Wang… - Advanced …, 2022 - Wiley Online Library
Electromagnetic (EM) absorbers play an increasingly essential role in the electronic
information age, even toward the coming “intelligent era”. The remarkable merits of …
information age, even toward the coming “intelligent era”. The remarkable merits of …
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen - Journal of applied physics, 2005 - pubs.aip.org
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …
self-terminating gas–solid reactions, has for about four decades been applied for …
Sulfide solid electrolytes for lithium battery applications
The use of solid electrolytes is a promising direction to improve the energy density of lithium‐
ion batteries. However, the low ionic conductivity of many solid electrolytes currently hinders …
ion batteries. However, the low ionic conductivity of many solid electrolytes currently hinders …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
High dielectric constant oxides
J Robertson - The European Physical Journal-Applied Physics, 2004 - cambridge.org
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
Molecular interactions driving the layer-by-layer assembly of multilayers
J Borges, JF Mano - Chemical reviews, 2014 - ACS Publications
Over the last few decades there has been a huge interest in nanostructured functional
materials and assembly techniques for preparing functional molecular assemblies with …
materials and assembly techniques for preparing functional molecular assemblies with …
Low-Temperature Al2O3 Atomic Layer Deposition
Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33°
C in a viscous-flow reactor using alternating exposures of Al (CH3) 3 (trimethylaluminum …
C in a viscous-flow reactor using alternating exposures of Al (CH3) 3 (trimethylaluminum …
High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Atomic layer deposition (ALD): from precursors to thin film structures
M Leskelä, M Ritala - Thin solid films, 2002 - Elsevier
The principles of the atomic layer deposition (ALD) method are presented emphasizing the
importance of precursor and surface chemistry. With a proper adjustment of the experimental …
importance of precursor and surface chemistry. With a proper adjustment of the experimental …
Area-selective deposition: fundamentals, applications, and future outlook
This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …