Heterointerface engineering in electromagnetic absorbers: new insights and opportunities

L Liang, W Gu, Y Wu, B Zhang, G Wang… - Advanced …, 2022 - Wiley Online Library
Electromagnetic (EM) absorbers play an increasingly essential role in the electronic
information age, even toward the coming “intelligent era”. The remarkable merits of …

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

RL Puurunen - Journal of applied physics, 2005 - pubs.aip.org
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

Sulfide solid electrolytes for lithium battery applications

J Lau, RH DeBlock, DM Butts, DS Ashby… - Advanced Energy …, 2018 - Wiley Online Library
The use of solid electrolytes is a promising direction to improve the energy density of lithium‐
ion batteries. However, the low ionic conductivity of many solid electrolytes currently hinders …

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

High dielectric constant oxides

J Robertson - The European Physical Journal-Applied Physics, 2004 - cambridge.org
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

Molecular interactions driving the layer-by-layer assembly of multilayers

J Borges, JF Mano - Chemical reviews, 2014 - ACS Publications
Over the last few decades there has been a huge interest in nanostructured functional
materials and assembly techniques for preparing functional molecular assemblies with …

Low-Temperature Al2O3 Atomic Layer Deposition

MD Groner, FH Fabreguette, JW Elam… - Chemistry of …, 2004 - ACS Publications
Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33°
C in a viscous-flow reactor using alternating exposures of Al (CH3) 3 (trimethylaluminum …

High-K materials and metal gates for CMOS applications

J Robertson, RM Wallace - Materials Science and Engineering: R: Reports, 2015 - Elsevier
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Atomic layer deposition (ALD): from precursors to thin film structures

M Leskelä, M Ritala - Thin solid films, 2002 - Elsevier
The principles of the atomic layer deposition (ALD) method are presented emphasizing the
importance of precursor and surface chemistry. With a proper adjustment of the experimental …

Area-selective deposition: fundamentals, applications, and future outlook

GN Parsons, RD Clark - Chemistry of Materials, 2020 - ACS Publications
This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …