In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trap**
memory device by RF magnetron sputtering technique. The structural and electrical …

Purpose The purpose of this paper is to investigate the effect of high-k material HfO2 as a
buffer layer for the fabrication of metal-ferroelectric-insulator-silicon (MFeIS) structures on Si …

The Effect of plasma enhanced atomic layer deposited (PEALD) Al 2 O 3 buffer layer on the
electrical and ferroelectric characteristics of the metal/ferroelectric/insulator/silicon (MFIS) …

Materials in which ferroelectric polarization can be locally controlled have potential for high-
density information storage applications. Herein, we investigated the ferroelectric …

We report the relationship between grain shape and local piezoelectric coefficient (d 33)
hysteresis loops in a Bi-layered perovskite Bi 3 TaTiO 9 (BTTO) thin film, fabricated via …

Ferroelectric perovskites are favored for integrated device applications due to their high
dielectric constants and strong piezoelectric responses. However, the commonly used lead …

For the proposed work, electrical and ferroelectric characteristics of metal–ferroelectric–
insulator–silicon (MFeIS) and metal–ferroelectric–insulator–metal (MFeIM) capacitor …

Metal–ferroelectric–metal (MFM) capacitors with Pt‐/Al‐doped HfO2 (Al: HfO2)/TiN structures
are characterized to demonstrate the ferroelectricity of the Al: HfO2 thin films deposited by …

In this work, the charge retention properties of the thermal ALD-Al 2 O 3 trap** layer with
metal-oxide-oxide-oxide-silicon (MOOOS) gate stack have been investigated for non-volatile …

Abstract Thin film of Barium–Strontium–Titanate (Ba x Sr 1− x TiO 3) has been fabricated
through sol–gel spin-coating process with optimized value of 'x'for non-volatile memory …