GaN technology. The disclosure proposes an integrated auxiliary (double) gate terminal and
a pulldown network to achieve a normally-off (E-Mode) GaN transistor with threshold voltage …

The disclosure relates to power semiconductor devices in GaN technology. The disclosure
proposes an integrated auxiliary gate terminal (15) and a pulldown network to achieve a …

The disclosure relates to a III-nitride power semiconductor based heterojunction device
including a low voltage termi nal, a high voltage terminal, a control terminal and an active …

2021-08-13 Assigned to CAMBRIDGE ENTERPRISE LIMITED reassignment CAMBRIDGE
ENTERPRISE LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

The present disclosure relates to a circuit and, more particularly, to comparator circuits used
with a depletion mode device and methods of operation. The circuit includes: a comparator; …

2021-12-10 Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. reassignment
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS …

BACKGROUND [0003] With the development of large-scale semiconduc tor technologies,
devices are becoming smaller and more integrated. In order to reduce costs, an area of a …

A depletion-mode current source having a saturation current of sufficient accuracy for use as
a pre-charge circuit in a start-up circuit of an AC-to-DC power converter is fabri cated using …

(57) ABSTRACT A gallium nitride high electron mobility transistor including a substrate, a
nucleation layer, a buffer layer, a channel layer, a barrier layer, a gate electrode, a source …

We disclose a III-nitride semiconductor based heterojunc tion power device comprising: a
first heterojunction transis tor formed on a substrate (4) and a second heterojunction …