In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

Porous semiconductor compounds represent a class of materials which is under an intense
research focus over the last years. Herein, morphologies and topologies produced by …

Porous templates are widely used for the preparation of various metallic nanostructures.
Semiconductor templates have the advantage of controlled electrical conductivity. Site …

A comparative study of the anodization processes occurring at the GaAs (111) A and GaAs
(111) B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO 3 …

The preparation of GaAs nanowire templates with the cost-effective electrochemical etching
of (001) and (111) B GaAs substrates in a 1 M HNO3 electrolyte is reported. The …

In this paper, three types of microstructures are argued as substrates for electrochemical
deposition of Au nanodots. They include:(a) aero-GaN consisting of hollow GaN …

Porous InP templates possessing a thickness of up to 100 µm and uniformly distributed
porosity were prepared by anodic etching of InP substrates exhibiting different electrical …

We report on fabrication of two-dimensional metallo-semiconductor networks by using
pulsed electroplating of Pt inside electrochemically-prepared porous GaP layers with …

We demonstrate that fast anodic etching of bulk crystalline substrates of n-InP via
photolithographically defined windows leads to the formation of nanomembranes and …

We report on the application of specially-designed masks for the purpose of electrochemical
etching of InP single crystals which enables one to change in a controlled fashion the …