The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

This paper presents the study of the impact of gate work function engineering on the
performance of AlGaN channel high electron mobility transistor. The proposed devices with …

In the present work, we propose and perform extensive simulation study of the novel device
structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate …

With the introduction of the new silicon on insulator (SOI)-Tri-Gate MOSFET technologies, it
is very necessary to simulate the thermal performance in these nano devices. We have to …

We study heat transfer process in a 10 nm Metal-Oxide-Semiconductor Field Effect
Transistor (MOSFET) based on Silicon on Insulator (SOI) and Double Gate (DG). In this …

This work uncovers the potential benefit of AlInN/GaN underlap double-gate MOS-HEMT for
RF and analog applications. The device channel consists of a lattice-matched wideband Al …

The paper reports on the influence of a barrier thickness and gate length on the various
device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC …

Conventional HEMT devices perform poorly especially in the K a band due to buffer electron
spillage and poor confinement. Microwave and defense industries are key consumers of …

Abstract In this work, AlGaN/GaN based DG MOSHEMT is designed at 0.8 µm gate length
with Al 2 O 3 gate dielectric. The key device performance parameter such as gm, AV, f T, and …

This paper reports a systematic theoretical study of Al0. 23Ga0. 77N/GaN/AlxGa1‐xN double‐
heterojunction high electron mobility transistors (DH‐HEMTs) with a boron‐doped GaN cap …