[HTML][HTML] Perspective: Toward efficient GaN-based red light emitting diodes using europium do**
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Simulation design of P–I–N-type all-perovskite solar cells with high efficiency
HJ Du, WC Wang, YF Gu - Chinese Physics B, 2017 - iopscience.iop.org
According to the good charge transporting property of perovskite, we design and simulate ap–
i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite …
i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite …
Temperature dependence of luminescence spectra in europium doped Ga2O3 film
Z Chen, X Wang, F Zhang, S Noda, K Saito… - Journal of …, 2016 - Elsevier
Europium doped Ga 2 O 3 films were deposited on sapphire substrates by using pulsed
laser deposition. The influences of substrate temperature on structural and optical properties …
laser deposition. The influences of substrate temperature on structural and optical properties …
Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition
Abstract Thulium (Tm) doped Ga 2 O 3 films were deposited on sapphire substrates by
pulsed laser deposition (PLD) with changing Tm compositions in the targets. Energy …
pulsed laser deposition (PLD) with changing Tm compositions in the targets. Energy …
Photoluminescence suppression effect caused by histamine on amino-functionalized graphene quantum dots with the mediation of Fe3+, Cu2+, Eu3+: Application in …
In this work, the photoluminescence of aqueous dispersion of amino-functionalized
graphene quantum dots (GQDs-amino), with average size of 28 nm, was studied in the …
graphene quantum dots (GQDs-amino), with average size of 28 nm, was studied in the …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Surface plasmon coupling in GaN: Eu light emitters with metal-nitrides
Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are
investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN: Eu …
investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN: Eu …
Pathway towards high-efficiency Eu-doped GaN light-emitting diodes
A physically intuitive current injection efficiency model for a GaN: Eu quantum well (QW) has
been developed to clarify the necessary means to achieve device quantum efficiency higher …
been developed to clarify the necessary means to achieve device quantum efficiency higher …
Enhanced red emission from Eu-implanted ZnMgO layers and ZnO/ZnMgO quantum structures
Photoluminescence (PL) of Eu 3+ ions in single layers of ZnO and ZnMgO and in short-
period ZnO/ZnMgO and ZnO/MgO superlattices (SLs) grown by molecular beam epitaxy was …
period ZnO/ZnMgO and ZnO/MgO superlattices (SLs) grown by molecular beam epitaxy was …
Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures
Erbium (Er) doped III-nitride materials have attracted much attention due to their capability to
provide highly thermal stable optical emission in the technologically important as well as eye …
provide highly thermal stable optical emission in the technologically important as well as eye …