Band gap size of armchair graphene nanoribbons (AGNRs) can be tuned by implementing
topological antidotes or boron/nitride (BN) atoms at the middle of ribbons. By imposing such …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs
(graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR …

The use of graphene and other two-dimensional materials in next-generation electronics is
hampered by the significant damage caused by conventional lithographic processing …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

In this paper, for the first time device characteristics of field-effect tunneling transistors based
on vertical graphene-hBN heterostructure (VTGFET) and vertical graphene nanoribbon …

In this study, the performance of armchair phosphorene nanoribbons (APNRs) tunnel field-
effect transistors (TFETs) is compared to that of conventional Metal-Oxide-Semiconductor …

Graphene has enormous potential in nanoelectronics because of its remarkable electronic
properties. Pristine graphene is a zero-bandgap semimetal nanomaterial unsuitable for logic …

The ambipolar behavior limits the performance of Schottky-barrier-type graphene
nanoribbon field-effect transistors (SB-GNRFETs). We propose an asymmetric gate (AG) …

Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic
applications. Because GNR fabrication technology is still in an early stage, modelling of …