Conventional Si-based complementary metal–oxide–semiconductor (CMOS) techniques are
suffering intrinsic limitations induced by the continuous downscaling of physical dimensions …

Single layer graphene is an ideal material for the base layer of hot electron transistors
(HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long …

To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron
transistor (HET) has been proposed. This device has the advantage of high working speed …

We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron
devices reaching the ballistic limit at room temperature. The devices are realized with …

III-nitride-based hot electron transistors (HETs) offer a significant promise as high-speed,
high-power devices, but their performance has been limited to below that of competing …

The integration of graphene and other two-dimensional (2D) materials with existing silicon
semiconductor technology is highly desirable. This is due to the diverse advantages and …

Since quantum computers have been gradually introduced in countries around the world,
the development of the many related quantum components that can operate independently …

Combining two-and three-dimensional (2D/3D) materials provides a unique route to
enabling next-generation hot electron transistors (HETs)—a vertical ballistic device …

III-nitride-based hot electron transistors (HETs) hold significant promise as high-speed, high-
power devices. In our previous work, we demonstrated high current density and common …

This paper establishes the design space of III-N hot electron transistors (HETs) for high
current gain by designing and fabricating HETs with scaled base thickness. The device …