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Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
β-phase gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG) semiconductor
with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field strength of∼ 8 …
with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field strength of∼ 8 …
[HTML][HTML] Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial
thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a …
thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a …
[HTML][HTML] State of the art, trends, and opportunities for oxide epitaxy
Oxides have attracted enormous attention for both application-driven and fundamental solid-
state research owing to their broad range of unusual and unique properties. Oxides play an …
state research owing to their broad range of unusual and unique properties. Oxides play an …
[HTML][HTML] Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy | APL Materials |
AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor
Traditionally, elemental Ga and Si have been used to supply Ga and Si, respectively, in
molecular beam epitaxy (MBE) to grow Si-doped β-Ga 2 O 3. In this work, we investigated …
molecular beam epitaxy (MBE) to grow Si-doped β-Ga 2 O 3. In this work, we investigated …
Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
S Kuang, Z Yang, Z Zhang, Z Sheng, S Wei… - Materials Today …, 2024 - Elsevier
In this work, we report the transport, defect state and electronic structure properties of
unintentionally doped (UID) and Sn doped β-Ga 2 O 3 homo-epitaxial thin films grown by …
unintentionally doped (UID) and Sn doped β-Ga 2 O 3 homo-epitaxial thin films grown by …
[HTML][HTML] Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time
Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts
and selective area do**. We report the impact of annealing ambient, temperature, and …
and selective area do**. We report the impact of annealing ambient, temperature, and …
2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications
Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …
[HTML][HTML] Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3
Nominally phase-pure γ-Ga 2 O 3 was deposited on (100) MgAl 2 O 4 within a narrow
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …