Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films
Monolithic and phosphor-free light-emitting diodes (LEDs) have been fabricated based on
vertically integrated Ga 2 O 3: Tm, Ga 2 O 3: Eu, and Ga 2 O 3: Er films by alternate-target …
vertically integrated Ga 2 O 3: Tm, Ga 2 O 3: Eu, and Ga 2 O 3: Er films by alternate-target …
Color-tunable light-emitting diodes based on rare earth doped gallium oxide films
Color-tunable light-emitting diodes (LEDs) offer a broad spectrum of applications,
encompassing augmented and virtual reality displays, indoor lighting, and architectural …
encompassing augmented and virtual reality displays, indoor lighting, and architectural …
The preparation of CuO film under different annealing atmospheres and investigation of the excellent electrical and undoped tunable electroluminescence …
X Zhang, G **ang, J Zhang, Z Yue, Y Liu… - Journal of Alloys and …, 2024 - Elsevier
Copper oxide (CuO) film is widely used in optoelectronic devices. The CuO films were
fabricated by radio frequency (RF) magnetron sputtering and then annealed at 700° C under …
fabricated by radio frequency (RF) magnetron sputtering and then annealed at 700° C under …
Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film
G Deng, Y Huang, Z Chen, C Pan, K Saito… - Journal of …, 2021 - Elsevier
Yellow color from vertically integrated light emitting device (LED) was reported. The
multilayer structured Er and Eu doped Ga 2 O 3 films were deposited on sapphire and GaAs …
multilayer structured Er and Eu doped Ga 2 O 3 films were deposited on sapphire and GaAs …
[HTML][HTML] InP-based quantum dot on-chip white LEDs with optimal circadian efficiency
Solid-state light-emitting diodes (LEDs) are capable of reaching high visual performance,
both in terms of efficiency and color quality. The lighting industry is however increasingly …
both in terms of efficiency and color quality. The lighting industry is however increasingly …
Excitation Efficiency and Limitations of the Luminescence of Ions in
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu 3+
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Temporally modulated energy shuffling in highly interconnected nanosystems
Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …
emission of photons, where localized defects and the quantum confinement of carriers can …
Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing
Eu doped Ga 2 O 3 thin films were prepared by pulsed laser deposition on sapphire
substrates. The influences of thermal annealing temperature as well as the annealing …
substrates. The influences of thermal annealing temperature as well as the annealing …
Carrier dynamics and excitation of ions in GaN
The carrier mobility and dynamics of nonequilibrium carriers in Eu-doped GaN have been
determined by above-band-gap, optically excited, time-resolved terahertz spectroscopy and …
determined by above-band-gap, optically excited, time-resolved terahertz spectroscopy and …