Spintronic devices for high-density memory and neuromorphic computing–A review

BJ Chen, M Zeng, KH Khoo, D Das, X Fong, S Fukami… - Materials Today, 2023 - Elsevier
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

Neuromorphic Computing in Synthetic Antiferromagnets by Spin‐Orbit Torque Induced Magnetic‐Field‐Free Magnetization Switching

X Han, Z Wang, Y Wang, D Wang… - Advanced Functional …, 2024 - Wiley Online Library
Synthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and
highly efficient spin‐orbit torque switching has great application potential in neuromorphic …

Exploring orbital-charge conversion mediated by interfaces with through spin-orbital pum**

E Santos, JE Abrão, AS Vieira, JBS Mendes… - Physical Review B, 2024 - APS
We explore the impact of different materials on orbital-charge conversion in heterostructures
with a naturally oxidized copper cap** layer. Introducing a thin layer of Cu O x (3 nm) to …

Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications

T **, B Zhang, F Tan, GJ Lim, Z Chen, J Cao… - Nano Letters, 2024 - ACS Publications
Exploring multiple states based on the domain wall (DW) position has garnered increased
attention for in-memory computing applications, particularly focusing on the utilization of spin …

Emerging Materials and Computing Paradigms for Temporal Signal Analysis

T Zhang, S Wozniak, GS Syed, P Mannocci… - Advanced …, 2025 - Wiley Online Library
In the era of relentless data generation and dynamic information streams, the demand for
efficient and robust temporal signal analysis has intensified across diverse domains such as …

Leakage function in magnetic domain wall based artificial neuron using stray field

WLW Mah, JP Chan, G KR, VB Naik… - Applied Physics …, 2023 - pubs.aip.org
Recently, brain-inspired neuromorphic computing (NC) has been gaining traction as it is
expected to be more power efficient and a more suitable platform for artificial intelligence …

Shape anisotropy induced field-free switching and enhancement of dam**like field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn …

B Wu, M **, Z Shao, H Fan, J Wen, H Li, C Yu, B Liu… - Physical Review B, 2023 - APS
Current-induced spin-orbit torque (SOT) switching of perpendicular magnetization requires
an additional symmetry breaking, calling for modifications of the conventional SOT devices …

Enlarged Thickness Window and Maintained High Spin–Orbit Torque Efficiency for Metastable Tungsten by Increasing Amorphous Crystalline: A Path toward Low …

S Lu, R **ao, J Zhang, X Ning, H Zhang… - ACS Applied …, 2024 - ACS Publications
Spin–orbit torque (SOT) magnetic random access memory (MRAM) has emerged as a focal
point of research due to its exceptional performance and potential for low energy …

Electrically manipulating exchange bias and realizing multiple remanent states in platinum/cobalt/iridium manganese heterostructures

B Wu, M **, H Fan, M Wei, Z Feng, Z Shao… - Cell Reports Physical …, 2024 - cell.com
The current-induced spin-orbit torque (SOT) to manipulate exchange bias holds promise for
advancement on full electrically controlled spintronic devices. However, the practical …

Exponential dependence between motion acceleration and diameters of skyrmions under the driven of periodical strains

H Wu, R Zhao, Y Li, X Zhang - Applied Physics Letters, 2024 - pubs.aip.org
The internal strain in practical materials is usually seen as defects and a large of methods
have been proposed to avoid its appearance. However, strains in magnetic materials can be …