Atmospheric data collected through spaceborne millimeter (mm) and submillimeter-wave
(sub-mm-wave) radiometry combined with complex numerical weather prediction models …

In this Letter, we present the excellent negative differential resistance (NDR) characteristics
of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which the active layers are …

Strain engineering as one of the most powerful techniques for tuning optical and electronic
properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we …

Resonant tunneling of electrons is important for the manufacture of high‐speed electronic
oscillators and the electron injection control in quantum cascade lasers. In this work, room …

We demonstrated GaN-based resonant tunneling diode (RTD) oscillators employing
monolithic microwave integrated circuits. The GaN-based RTDs with a GaN quantum well …

We report planar AlN/GaN resonant tunneling diodes (RTDs) fabricated using a nitrogen ion
implantation isolation process on silicon substrates. The active area of AlN/GaN RTDs is …

We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb
double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by …

We report repeatable AlN/GaN resonant tunneling diodes (RTDs) grown on a silicon
substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative …

This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling
diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam …

Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk
GaN at substrate temperatures of 760 C, 810 C, 860 C, and 900 C via plasma-assisted …