In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for
the realization of near infrared light sources on a silicon waveguide platform, suitable for …

High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

Methods are provided for treating germanium Surfaces in preparation for Subsequent
deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to …

Methods are provided for producing SiGe-on-insulator structures and for forming strain-
relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are …

We present a compact 1.3× 4 μm^ 2 Germanium waveguide photodiode, integrated in a
CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB …

Band gap shrinkage induced by tensile strain is shown for Ge directly grown on Si substrate.
In Ge-on-Si pin diodes, photons having energy lower than the direct band gap of bulk Ge …

Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The
carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V¿ L …

Silicon-based photodetectors are important optoelectronic devices in many fields. Many
investigations have been conducted to improve the performance of silicon-based …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Epitaxially grown Ge layers on Si substrate are shown to reveal an enhanced absorption of
near-infrared light, which is effective for the photodiode application in Si-based photonics …