The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal
and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

In this letter, we apply an oxidation technique for p-GaN to a normally-off p-GaN/AlGaN/GaN
HEMT to improve the threshold voltage and gate reliability. Oxygen-plasma and low …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiN x passivation
by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a …

In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For
the first time, the preserved OFF-state drain blocking capability has been demonstrated in p …