The flexoelectricity describes the contribution of the linear couplings between the electric
polarization and strain gradient and between polarization gradient and strain to the …

This review provides a summary of the rich physics expressed within SrTiO 3-based
heterostructures and nanostructures. The intended audience is researchers who are …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

Because of their immense scalability and manufacturability potential, the HfO2-based
ferroelectric films attract significant attention as strong candidates for application in …

Mechanically driven polarization switching via scanning probe microscopy provides a
valuable voltage‐free strategy for designing ferroelectric nanodomain structures. However, it …

Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic
properties of oxides and related emergent functionalities that have implications for device …

The mechanism of the remnant polarization (P r) growth during the first stage of ferroelectric
HfO2-based memory cell operation (the wake-up effect) is still unclear. In this work, we …

Thin film flexoelectricity is attracting more attention because of its enhanced effect and
potential application in electronic devices. Here we find that a mechanical bending induced …

Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …

Electrostatic fields tune the ground state of interfaces between complex oxide materials.
Electronic properties, such as conductivity and superconductivity, can be tuned and then …