Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Emerging reconfigurable electronic devices based on two‐dimensional materials: A review
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, develo** semiconductor technology with novel concepts and …
their physical limits, develo** semiconductor technology with novel concepts and …
Performance limit of monolayer MoSi 2 N 4 transistors
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Giant tunnelling electroresistance through 2D sliding ferroelectric materials
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN)
and its novel sliding inversion mechanism were reported experimentally (Science2021, 372 …
and its novel sliding inversion mechanism were reported experimentally (Science2021, 372 …
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga2O3
Y Ma, L Dong, P Li, L Hu, B Lu, Y Miao… - … applied materials & …, 2022 - ACS Publications
The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-
based n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) are …
based n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) are …
Ohmic contacts in Mxene/MoSi2N4 heterojunctions
X Zhang, JY Zheng, YC **ang, D Wu, J Fan… - Applied Physics …, 2023 - pubs.aip.org
Efficient Ohmic contacts are highly preferred in metal/semiconductor (M/S) junctions to
achieve the exceptional intrinsic characteristics of the two-dimensional (2D) semiconductor …
achieve the exceptional intrinsic characteristics of the two-dimensional (2D) semiconductor …
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
Abstract Since Si‐based Moore's law is physically limited, 2D semiconductors are proposed
as successors to continue shrinking the transistor size for more Moore electronics. However …
as successors to continue shrinking the transistor size for more Moore electronics. However …
Designing high-efficiency metal and semimetal contacts to two-dimensional semiconductor γ-GeSe
Forming a low-resistance semiconductor–metal contact is a critical step to achieve a high-
performance two-dimensional (2D) semiconductor nanoelectronic device. Motivated by the …
performance two-dimensional (2D) semiconductor nanoelectronic device. Motivated by the …