The important material parameters for 6H silicon carbide (6H-SiC) are extracted from the
literature and implemented into the 2-D device simulation programs PISCES and …

Models for the electron mobility in the three most important silicon carbide (SiC) polytypes,
namely, 4H, 6H, and 3C SiC are developed. A large number of experimental mobility data …

Temperature-and electric field-dependent electron transport in 3C–, 4H–, and 6H–SiC has
been calculated by the Monte Carlo technique. Due to the freezeout of deep donor levels the …

Electron-phonon coupling is at the core of various regimes of material-based science and
technology. Taking 3 C-silicon carbide (3 C-SiC) as an example, despite its very wide …

The two‐dimensional hole gas (2DHG) induced at H‐terminated diamond surface provides
the most widely used room‐temperature surface electrical conductance of diamond …

A Monte Carlo study of the high‐field electron transport in 4H–SiC is presented using a new
analytic band model. The band model consists of two analytical bands that include band …

Monte Carlo simulation results for the field‐and temperature‐dependent electronic
mobilities, drift velocities, and diffusion coefficients in 4H‐SiC are presented. The …

In this article the first calculation of hole transport in the 3C phase of SiC is presented. The
salient features of the model are the full band-structure computed by the empirical …

The temperature dependence of the Hall mobility µ H has been measured from 140 to 870 K
for nine boron-doped homoepitaxial chemical vapor deposition (CVD) diamond thin films …

3C-SiC (/spl beta/-SiC) and 6H-SiC pn junction diodes have been fabricated in regions of
both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H …