Understanding memristive switching via in situ characterization and device modeling
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …
unconventional computing, memristive devices have drawn substantial research attention in …
Memristors for energy‐efficient new computing paradigms
In this Review, memristors are examined from the frameworks of both von Neumann and
neuromorphic computing architectures. For the former, a new logic computational process …
neuromorphic computing architectures. For the former, a new logic computational process …
Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Nanoscale resistive switching devices for memory and computing applications
With the slowing down of the Moore's law and fundamental limitations due to the von-
Neumann bottleneck, continued improvements in computing hardware performance become …
Neumann bottleneck, continued improvements in computing hardware performance become …
Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching
Conductive bridge random access memory (CBRAM) is a leading candidate to supersede
flash memory, but poor understanding of its switching process impedes widespread …
flash memory, but poor understanding of its switching process impedes widespread …
Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer
Conducting bridge random access memory (CBRAM) is one of the most promising
candidates for future nonvolatile memories. It is important to understand the scalability and …
candidates for future nonvolatile memories. It is important to understand the scalability and …
Engineering synaptic plasticity through the control of oxygen vacancy concentration for the improvement of learning accuracy in a Ta2O5 memristor
HG Hwang, Y Pyo, JU Woo, IS Kim, SW Kim… - Journal of Alloys and …, 2022 - Elsevier
Ta 2 O 5 memristors exhibit bipolar switching properties attributable to the growth and
destruction of oxygen vacancy filaments (OVFs). The transmission properties of biological …
destruction of oxygen vacancy filaments (OVFs). The transmission properties of biological …
Actual origin and precise control of asymmetrical hysteresis in an individual CH 3 NH 3 PbI 3 micro/nanowire for optical memory and logic operation
R Gou, Z Ouyang, C Xu, S He, S Cheng, C Shi… - Nanoscale …, 2022 - pubs.rsc.org
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its
application in solar cells and photodetectors is seriously hindered due to hysteresis …
application in solar cells and photodetectors is seriously hindered due to hysteresis …
In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure
Graphene oxide decorated with oxygen functional groups is a promising candidate as an
active layer in resistive switching devices due to its controllable physical-chemical …
active layer in resistive switching devices due to its controllable physical-chemical …
Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices
Resistive switching characteristics and conducting filament formation dynamics in solid
polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and …
polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and …