Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …

The advent of topological semimetals enables the exploitation of symmetry-protected
topological phenomena and quantized transport. Here, we present homogeneous rectifiers …

GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …

In this study, a highly sensitive and self‐driven near‐infrared (NIR) light photodetector based
on PdSe2/pyramid Si heterojunction arrays, which are fabricated through simple …

Recently, lead halide perovskites arouse intensive attentions in photoelectric fields owing to
their low trap state density, high carrier mobility, large extinction coefficient, and low …

Single-crystalline 9, 10-bis (phenylethynyl) anthracene (BPEA) nanowires are promising
building blocks for all-organic ultraviolet (UV) photodetectors owing to their environmental …

Silicon (Si) based gallium nitride (GaN) possesses great development potential in
fabricating integrated photodetectors. Nevertheless, the large lattice and thermal mismatch …

GaN-based p–i–n ultraviolet photodetectors (UV-PDs) with a 20 nm thick Al 2 O 3
passivation layer are fabricated and the photocurrent generation mechanisms of the device …

Realizing manipulation of the photoelectric properties of wide bandgap semiconductors is a
main challenge for successful next-generation functional optoelectronics. As an intriguing …