Recent progress in group-III metal chalcogenide based Janus materials: from properties to potential applications

Z Ma, T Zhou, W Duan, Y Huang - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Two-dimensional (2D) materials with unique geometrics and physicochemical properties
have become the most attractive star materials in recent two decades. Since research on …

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

IS Fathima, MK Mohanta… - Journal of Physics …, 2023 - iopscience.iop.org
The new paradigm in electronics consists in realizing the seamless integration of many
properties latent in nanomaterials, such as mechanical flexibility, strong spin–orbit coupling …

Aminoisophthalate Bridged Cd(II)-2D Coordination Polymer: Structure Description, Selective Detection of Pd2+ in Aqueous Medium, and Fabrication of Schottky …

S Bhunia, D Sahoo, S Maity, B Dutta, S Bera… - Inorganic …, 2023 - ACS Publications
Photoluminescence activity of coordination polymers (CPs) has evoked intricate applications
in the field of materials science, especially sensing of ions/molecules. In the present study, 2 …

Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi2N4 (X = Mo, W) Monolayers

A Jalil, T Zhao, A Firdous, A Kanwal, SR Ali Raza… - Langmuir, 2024 - ACS Publications
The two-dimensional (2D) semiconducting family of XSi2N4 (X= Mo and W), an emergent
class of air-stable monolayers, has recently gained attention due to its distinctive structural …

Understanding electronic properties and tunable Schottky barriers in a graphene/boron selenide van der Waals heterostructure

ST Nguyen, CQ Nguyen, YS Ang, N Van Hoang… - Langmuir, 2023 - ACS Publications
van der Waals heterostructures provide a powerful platform for engineering the electronic
properties and for exploring exotic physical phenomena of two-dimensional materials. Here …

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

X Niu, C Pan, A Shi, R Guan, W Shan, K Liu, X Lu… - Applied Surface …, 2023 - Elsevier
The rapid development of two-dimensional (2D) ferroelectric materials has significantly
facilitated the design of new electronic nanodevices. During preparation, the contact …

First-principles study on graphene/WSi2N4 van der Waals heterostructure: Tuning the Schottky barrier

J Li, H Li, Z Bai, F Liu, K An, J Lu - Physica B: Condensed Matter, 2024 - Elsevier
Achieving ohmic contact at the interface of the metallic electrode and semiconducting
channel is essential to improve device performance. We investigate the electrical contact …

Unveiling Versatile Electronic Properties and Contact Features of Metal–Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures

TV Vu, AI Kartamyshev, TH Ho, NN Hieu, HV Phuc… - Langmuir, 2024 - ACS Publications
Recently, searching for a metal–semiconductor junction (MSJ) that exhibits low-contact
resistance has received tremendous consideration, as they are essential components in …

[HTML][HTML] Findings of inhomogeneity in barrier height of Schottky junction Al/rGO-SnO2 having anomaly in theoretical and experimental value of Richardson constant: A …

P Das, B Pal, M Das, S Sil, D Das, A Layek, PP Ray - Results in Physics, 2022 - Elsevier
In this research, the temperature dependent dynamical behavior of Schottky junction Al/rGO-
SnO 2 has been investigated with thermionic emission (TE) theory within the temperature …

Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure

J **a, Y Gu, J Mai, T Hu, Q Wang, C **e, Y Wu, X Wang - Heliyon, 2023 - cell.com
The two-dimensional M o S i 2 N 4 monolayer is an emerging semiconductor material that
offers considerable promise due to its ultra-thin profile, tuneable mechanical properties …