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TA Langdo, MT Currie, R Hammond… - US Patent …, 2006 - Google Patents
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Methods of forming strained-semiconductor-on-insulator finFET device structures

AJ Lochtefeld, TA Langdo, R Hammond… - US Patent …, 2006 - Google Patents
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Image sensor using thin-film SOI

NF Borrelli, MD Brady, RL Burt… - US Patent App. 11 …, 2008 - Google Patents
Systems and methods related to an image sensor of one or more embodiments include
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Hybrid fin field-effect transistor structures and related methods

MT Currie - US Patent 8,183,627, 2012 - Google Patents
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CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs

E Fitzgerald, N Gerrish - US Patent App. 10/266,339, 2003 - Google Patents
(57) ABSTRACT A CMOS inverter having a heterostructure including a Si Substrate, a
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Control of strain in device layers by prevention of relaxation

MT Currie - US Patent 7,335,545, 2008 - Google Patents
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Control of strain in device layers by selective relaxation

MT Currie - US Patent 7,307,273, 2007 - Google Patents
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Hybrid semiconductor-on-insulator structures and related methods

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Strained silicon on insulator from film transfer and relaxation by hydrogen implantation

J Maa, JJ Lee, DJ Tweet, DR Evans… - US Patent …, 2006 - Google Patents
Transistors fabricated on Silicon-On-Insulator (SOI) sub Strate have significant advantages
Such as higher Speed, lower power and higher density than on bulk silicon wafer substrate …

Shallow trench isolation process

MT Currie, AJ Lochtefeld - US Patent 7,504,704, 2009 - Google Patents
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