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Semiconductors for terahertz photonics applications
Generation and measurement of ultrashort, subpicosecond pulses of electromagnetic
radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency …
radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency …
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
The GaBi x As 1− x bismide III-V semiconductor system remains a relatively underexplored
alloy particularly with regards to its detailed electronic band structure. Of particular …
alloy particularly with regards to its detailed electronic band structure. Of particular …
Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
In 0.53 Ga 0.47 Bi x As 1− x films were grown on InP: Fe substrates by molecular beam
epitaxy, with Bi concentrations up to x= 3.60%. Bi content in the epilayers was determined by …
epitaxy, with Bi concentrations up to x= 3.60%. Bi content in the epilayers was determined by …
GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications
Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
Disorder and the Urbach edge in dilute bismide GaAsBi
The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum
wells is studied using photoluminescence spectroscopy over a 10–300 K temperature range …
wells is studied using photoluminescence spectroscopy over a 10–300 K temperature range …
Understanding and reducing deleterious defects in the metastable alloy GaAsBi
Technological applications of novel metastable materials are frequently inhibited by
abundant defects residing in these materials. Using first-principles methods, we investigate …
abundant defects residing in these materials. Using first-principles methods, we investigate …
GaAsBi photoconductive terahertz detector sensitivity at long excitation wavelengths
We report the terahertz frequency radiation detection using photoconductive antennas
fabricated from molecular-beam-epitaxy-grown GaAsBi. We have estimated that the detector …
fabricated from molecular-beam-epitaxy-grown GaAsBi. We have estimated that the detector …
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
Localization effects on the optical properties of GaAs 1− x Bi x/GaAs single quantum wells
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
Surface morphology and Bi incorporation in GaSbBi (As)/GaSb films
A Duzik, JM Millunchick - Journal of crystal growth, 2014 - Elsevier
Abstract Several GaSbBi (As)/GaSb films were grown to investigate the effects of Bi on GaSb
surface morphology and bulk composition as a function of growth conditions. Scanning …
surface morphology and bulk composition as a function of growth conditions. Scanning …