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InP HBT technologies for THz integrated circuits
Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …
High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET
In this paper we present a 55 nm gate length In 0.53 Ga 0.47 As MOSFET with extrinsic
transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is …
transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is …
An ultralow-resistance ultrashallow metallic source/drain contact scheme for III–V NMOS
We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-
V NMOS with specific contact resistivity and sheet resistance which, for the first time …
V NMOS with specific contact resistivity and sheet resistance which, for the first time …
Performance evaluation of III–V nanowire transistors
III–V nanowire (NW) transistors are an emerging technology with the prospect of high
performance and low power dissipation. Performance evaluations of these devices …
performance and low power dissipation. Performance evaluations of these devices …
[HTML][HTML] Microscopic understanding of the growth and structural evolution of narrow bandgap III–V nanostructures
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising
building blocks in future electronic and optoelectronic devices. Thus, revealing the …
building blocks in future electronic and optoelectronic devices. Thus, revealing the …
[PDF][PDF] Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers
Ł Piskorski, RP Sarzała - Optica Applicata, 2016 - bibliotekanauki.pl
The proper modelling of semiconductor device operation with full complexity of many
interrelated physical phenomena taking place within its volume is possible only when the …
interrelated physical phenomena taking place within its volume is possible only when the …
Metal-InGaAs contact resistance calculations from first principles
The metal-semiconductor contact resistance is an important factor in the performance of
MOSFETs and a detailed understanding of the contact resistance is necessary in order to …
MOSFETs and a detailed understanding of the contact resistance is necessary in order to …
Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0. 53Ga0. 47As template
Integration of III-V semiconductors on a Si platform is interesting for both nanoelectronic and
optoelectronic devices. Among the different challenges, the formation of low resistive …
optoelectronic devices. Among the different challenges, the formation of low resistive …
[HTML][HTML] Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper …
H Guan, S Wang, L Chen, B Gao, Y Wang, C Jiang - Coatings, 2019 - mdpi.com
Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high
electron mobility transistors (HEMTs) have excellent physical properties, compared with the …
electron mobility transistors (HEMTs) have excellent physical properties, compared with the …
Lower limits to specific contact resistivity
We calculate minimum feasible contact resistivities to n-type and p-type InAs and In 0.53 Ga
0.47 As. Resistivities were calculated for a range of Schottky barrier heights as well as for …
0.47 As. Resistivities were calculated for a range of Schottky barrier heights as well as for …