Large-scale synthesis of GaN nanowires was grown on c-sapphire substrate by chemical
vapor deposition technique. X-ray diffraction, field emission scanning electron microscopy, μ …

This article reports the properties and the behavior of GaN during the photoelectrochemical
etching process using four different electrolytes. The measurements show that the porosity …

Metal-assisted chemical etching (MacEtch) is a top-down liquid semiconductor processing
technology applied here to realize highly monodisperse collections of GaN nanowires …

The growth of heterostructure of n-type GaN/AlN/Si (111) is carried out using the molecular
beam epitaxy (MBE) Veeco model Gen II system. The surface morphology of the as-grown …

In this paper we report the fabrication of porous GaN by UV-assisted electrochemical etching
with direct current densities of 5, 10 and 20mA/cm2 for 20min in electrolytes consisting of …

In this work nano-porous structures of n-GaN was fabricated using simple
photoelectrochemical etching techniques. The electrolyte was H2SO4: H2O2 under direct …

High aspect ratio gallium nitride (GaN) nanostructures were fabricated by photochemical
etching using hydrofluoric acid as the etchant. Under the etching time of 20 min, the surface …

In this paper, we report the preparation and characterization of a high quality crystalline ZnO
oxidization from metallic Zn. In X-ray diffraction (XRD) studies, crystalline characteristic was …

Metal-assisted chemical etching is a facile method to produce micro-/nanostructures in the
near-surface region of gallium nitride (GaN) and other semiconductors. Detailed studies of …

Porous gallium nitride (PGaN) layers were fabricated by metal-assisted photochemical
etching (MaPCE) using electrodeposited platinum nanoparticles (PtNPs) or gold …