Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
The impact of graded Al 0. 05 Ga 0. 95 N sub-channel over the DC characteristics of
AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS …
AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS …
Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs
The influence of gate overlap and underlap on the DC/RF behavior of a composite channel
based double gate MOSFET (DG MOSFET) that can be used for RF/analog applications is …
based double gate MOSFET (DG MOSFET) that can be used for RF/analog applications is …
Performance optimization of full swing adders for future DSP & machine learning applications using 16 nm CMOS process at high temperatures
K Manideep, B Abhinav, VM Gaddam… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
This article reports the optimization of full-swing (rail-to-rail voltage swing) adders for the
efficient realization of booth multipliers that have been considered as the vital blocks for …
efficient realization of booth multipliers that have been considered as the vital blocks for …
Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT
This paper analyzes the effect of a HfAlO x dielectric in a dual-channel (DC) single-gate (SG)
metal oxide semiconductor high-electron-mobility transistor (DCSG-MOSHEMT) on …
metal oxide semiconductor high-electron-mobility transistor (DCSG-MOSHEMT) on …
An Overview of Nanowire Field-Effect Transistors for Future Nanoscale Integrated Circuits
Due to the outstanding electrostatic integrity of nanowire (NW) gate all-around (GAA) field-
effect transistors (FETs), these devices have emerged as the most promising transistor …
effect transistors (FETs), these devices have emerged as the most promising transistor …
Negative Capacitance Field Effect Transistors for Future Low Power Electronics
Traditional silicon-based CMOS field-effecttransistors (FETs) cannot satisfy the requirements
of future high-speed low-power integrated circuits due to their ultra–high-power …
of future high-speed low-power integrated circuits due to their ultra–high-power …
Negative Capacitance Field Effect
D NIRMAL¹, J AJAYAN - Low-Dimensional Nanoelectronic …, 2022 - books.google.com
Traditional silicon-based CMOS field-effect transistors (FETs) cannot satisfy the
requirements of future high-speed low-power integrated circuits due to their ultra-high-power …
requirements of future high-speed low-power integrated circuits due to their ultra-high-power …
Ultra Low Power III-V Tunnel Field-Effect Transistors
Tunnel field-effect transistors (TFETs) have emerged as a potential device technology to
replace conventional MOSFET technology in future ultra low power and high-speed …
replace conventional MOSFET technology in future ultra low power and high-speed …
Effect of Nickel material over the DC characteristics of a Silicon Nanowire Cylindrical MOSFET
JC Pravin, RS Jayanthi, JY Sri… - 2021 5th International …, 2021 - ieeexplore.ieee.org
This paper focuses on designing a Cylindrical Metal Oxide Semiconductor Field Effect
Transistor (MOSFET) using Sentaurus Technology Computer Aided Design (TCAD). By …
Transistor (MOSFET) using Sentaurus Technology Computer Aided Design (TCAD). By …