The degraded performance of 4H-SiC transistors due to a high density of the SiC/SiO 2
interface states (D IT)(~ 10 12-10 13 eV-1 cm-2) has gained increasing attention in recent …

Al 2 O 3 films were prepared by atomic layer deposition using trimethylaluminum and H 2 O
at 250 C on 4H-SiC substrates and annealed at 1000 C in N 2. The as-deposited and …

Properties of SiO 2 gate dielectric deposited by atomic layer deposition (ALD) on Si-face of
4H silicon carbide (SiC) were systematically studied. The interface state and effective fixed …

This letter reports on the improvement of a SiO 2 layer formed by atomic layer deposition on
4H-SiC, using a post-deposition anneal in forming gas ambient. Capacitance–voltage …

The quality of oxide/semiconductor interface in SiC gate stacks is engineered by employing
atomic layer deposition of gate oxide and controlling post-deposition annealing (PDA) under …

In this work, the electron irradiation effects and post-irradiation annealing (PIA) response on
SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide-and …

We proposed a solution to improve the interface property and voltage instability of silicon
carbide metal–oxide–semiconductor (SiC MOS) capacitors by eliminating near-interface …

We report high mobility Si-face 4H-SiC MOSFET results via a novel interface engineering
technique using a gate-stack consisting of lanthanum silicate (LaSiO x) and atomic layer …

Detailed investigations on the pre-oxidation nitrogen implantation and post-oxidation
annealing processes for the improvement of channel mobility and specific on-resistance in …

The use of SiO 2/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can
be problematic due to high interface state density (D it) and low field-effect mobility (μ fe) …