Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

Single-crystal SiC is a typical third-generation semiconductor power-device material
because of its excellent electronic and thermal properties. An ultrasmooth surface with …

Silicon carbide (SiC) is a promising material for use in high-performance power electronic
devices. However, the SiC wafer is costly partly due to difficulties in machining the SiC …

Large-diameter single-crystal silicon carbide (SiC) wafers with good surface quality are
desirable to dramatically improve the performance of SiC-based power electronic devices …

A novel electrochemical shear-thickening polishing (ESTP) technique was proposed and
successfully applied to polish a 4H-SiC (000-1) workpiece. An in-depth investigation of the …

As the wide band-gap semiconductor materials, single crystal diamond, SiC, GaN are the
key in semiconductor fields. Due to the high hardness, high brittleness and strong chemical …

A chemical mechanical polishing (CMP) method of single-crystal SiC is proposed based on
metal electrochemical corrosion. The oxidation mechanism of SiC by electrochemical …

Slurryless electrochemical mechanical polishing (ECMP) was proposed and directly applied
to sliced 4H–SiC (0001) surfaces. After ECMP for 2 h at a current density of 10 mA/cm 2 in …

Silicon carbide (β-SiC) polishing aims to maximize material removal rate and surface quality.
Molecular dynamics (MD) simulations revealed β-SiC substrate removal methods with …

Vibration-assisted CMP can effectively improve the quality and efficiency of nano-polishing,
but the mechanism of the interaction between the substrate, solution and abrasive atoms …