REVIEW Semiconductor devices generally take advantage of the charge of electrons,
whereas magnetic materials are used for recording information involving electron spin. To …

This review covers the experimental and theoretical results on III–V-based ferromagnetic
semiconductors ((In, Mn) As and (Ga, Mn) As) accumulated to date. It was found in 1989 that …

The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition,
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …

This work shows how to control the surface density and size of InAs/InP quantum dots over a
wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in …

Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

The use of electron spin in future spintronic applications requires hybrid ferromagnetic/
semiconductor structures with well controlled materials properties. Besides the control of the …

BxGa (1− x) As alloys have been grown by molecular beam epitaxy. Reducing growth
temperature below 540° C and increasing the V/III flux ratio above 20 improved boron …

Emerging applications of self-assembled semiconductor quantum dot (QD)-based
nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present …

The surface atomic process that leads to the incorporation of extremely high concentrations
of excess arsenic into GaAs layers during growth by moelcular-beam epitaxy at low …

GaAs and (Ga, Mn) As were grown by low-temperature (LT) MBE. In this paper we report the
growth condition dependence of properties of LT GaAs and (Ga, Mn) As. Transient …