Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

X Yan, Y Li, X Zhang - Nanoscale Horizons, 2024 - pubs.rsc.org
Semiconductor nanowires are considered as one of the most promising candidates for next-
generation devices due to their unique quasi-one-dimensional structures and novel physical …

[HTML][HTML] Optical characterisation of nanowire lasers

SA Church, R Al-Abri, P Parkinson, D Saxena - Progress in Quantum …, 2022 - Elsevier
Semiconductor nanowire lasers are single-element structures that can act as both gain
material and cavity for optical lasing. They have typical dimensions on the order of an optical …

High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

HW Jeong, SA Church, M Döblinger, A Ajay… - Nano Letters, 2024 - ACS Publications
Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays
that host active quantum heterostructures is of paramount interest for on-chip integrated …

Ultra-long-working-distance spectroscopy of single nanostructures with aspherical solid immersion microlenses

A Bogucki, Ł Zinkiewicz, M Grzeszczyk… - Light: Science & …, 2020 - nature.com
In light science and applications, equally important roles are played by efficient light
emitters/detectors and by the optical elements responsible for light extraction and delivery …

Data‐Driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

SA Church, F Vitale, A Gopakumar… - Laser & Photonics …, 2024 - Wiley Online Library
Active wavelength‐scale optoelectronic components are widely used in photonic integrated
circuitry, however coherent sources of light–namely optical lasers–remain the most …

Ultralow threshold, single-mode InGaAs/GaAs multiquantum disk nanowire lasers

X Zhang, R Yi, N Gagrani, Z Li, F Zhang, X Gan… - ACS …, 2021 - ACS Publications
We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-
infrared spectral range. To ensure the single-mode operation, the NW diameter and length …

Holistic nanowire laser characterization as a route to optimal design

SA Church, N Patel, R Al‐Abri… - Advanced Optical …, 2023 - Wiley Online Library
Nanowire lasers are sought for near‐field and on‐chip photonic applications as they provide
integrable, coherent, and monochromatic radiation: the functional performance (threshold …

[HTML][HTML] Low-threshold strain-compensated InGaAs/(In, Al) GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

P Schmiedeke, A Thurn, S Matich, M Döblinger… - Applied Physics …, 2021 - pubs.aip.org
Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain
media has proven to be notoriously difficult due to the high compressive strain built up in the …

Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

S Skalsky, Y Zhang, JA Alanis, HA Fonseka… - Light: Science & …, 2020 - nature.com
Continuous room temperature nanowire lasing from silicon-integrated optoelectronic
elements requires careful optimisation of both the lasing cavity Q-factor and population …

Toward electrically driven semiconductor nanowire lasers

Y Zhang, D Saxena, M Aagesen, H Liu - Nanotechnology, 2019 - iopscience.iop.org
Semiconductor nanowire (NW) lasers are highly promising for making new-generation
coherent light sources with the advantages of ultra-small size, high efficiency, easy …