Since two decades piezoelectric MEMS resonator research has been making a headway by
leaps and bounds in multiple fronts such as micro/nanofabrication techniques, device and …

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …

This article reports on the modeling, design, fabrication, and testing of high-performance X-
cut lithium niobate (LN) laterally vibrating resonators (LVRs) operating around 50 MHz. The …

This letter reports on the design, fabrication, and testing of an X-cut lithium niobate laterally
vibrating resonator operating around 50 MHz and exhibiting a record figure of merit–FoM …

This article presents a comprehensive study of the performance of Sezawa surface acoustic
wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching …

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is
addressed using microfluidic cooling. Numerical modeling is done using finite element …

In a MEMS device having a substrate and a moveable micromachined member, a
mechanical structure secures the moveable micromachined member to the substrate, ther …

Gallium nitride (GaN) is a compound semiconductor which shows advantages in new
functionalities and applications due to its piezoelectric, optoelectronic, and piezo-resistive …

Degenerately doped semiconductor materials are deployed within resonant structures to
control the first and higher order temperature coefficients of frequency, thereby enabling …

Degenerately doped semiconductor materials are deployed within resonant structures to
control the first and higher order temperature coefficients of frequency, thereby enabling …