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State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J ** profile of stacked nanosheet transistors
Complex nonlinear dependence of ultra-scaled transistor performance on its channel
geometry and source/drain (S/D) do** profile bring obstacles in the advanced technology …
geometry and source/drain (S/D) do** profile bring obstacles in the advanced technology …
Multi- Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing
In this paper, multi-threshold voltage (V th) scheme of 7-nm node nanosheet FETs (NSFETs)
with narrow NS spacing were successfully achieved by metal-gate work function (WF) and …
with narrow NS spacing were successfully achieved by metal-gate work function (WF) and …