Features of the formation of ohmic contacts to n+-InN

PO Sai, NV Safryuk-Romanenko, DB But… - Ukrainian journal of …, 2019 - irbis-nbuv.gov.ua
We report about a study of the formation and current transport mechanism of ohmic contacts
to n+-InN with electron concentrations of 2× 1018, 8× 1018, and 4× 1019 cm− 3. Pd/Ti/Au …

[PDF][PDF] SEMICONDUCTORS AND DIELECTRICS

TCOF SI - ujp.bitp.kiev.ua
The processes of thermal transport in Si nanowires covered with an amorphous SiO2 shell
have been studied using the nonequilibrium molecular dynamics method. The influence of …

[CITATION][C] ОМІЧНІ КОНТАКТИ ДО НІТРИД ІНДІЄВИХ ЕПІТАКСІЙНИХ ПЛІВОК

ВВ Шинкаренко