Quantum resistance metrology using graphene

T Janssen, A Tzalenchuk, S Lara-Avila… - Reports on Progress …, 2013 - iopscience.iop.org
In this paper, we review the recent extraordinary progress in the development of a new
quantum standard for resistance based on graphene. We discuss the unique properties of …

Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating

S Aslanidou, A García-García, P Godignon, G Rius - APL Materials, 2020 - pubs.aip.org
For over 15 years, the number of studies on graphene electronics has not ceased growing.
The rich physics, a set of outstanding properties, and the envisioned range of potential …

[HTML][HTML] Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F Lafont, R Ribeiro-Palau, D Kazazis, A Michon… - Nature …, 2015 - nature.com
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards
(QHRS), accurate to within 10− 9 in relative value, but operating at lower magnetic fields …

Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene

JA Alexander-Webber, J Huang, DK Maude… - Scientific Reports, 2016 - nature.com
Epitaxial graphene has proven itself to be the best candidate for quantum electrical
resistance standards due to its wide quantum Hall plateaus with exceptionally high …

[HTML][HTML] Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

J Kunc, M Rejhon, P Hlídek - Aip Advances, 2018 - pubs.aip.org
We have measured optical absorption in mid-infrared spectral range on hydrogen
intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC …

Side-gate graphene field-effect transistors with high transconductance

B Hähnlein, B Händel, J Pezoldt, H Töpfer… - Applied Physics …, 2012 - pubs.aip.org
We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high
transconductance. A side-gate graphene FET with 55× 60 nm 2 active channel dimensions …

Synthesis and characteristics of graphene–graphene oxide material obtained by an underwater impulse direct current discharge

S Nikolay, K Victor - Plasma Chemistry and Plasma Processing, 2023 - Springer
This work proposed a novel approach, in which an impulse underwater discharge was used
to produce graphene–graphene oxide material in distilled water. The characteristics of this …

Advanced materials and techniques for biosensors and bioanalytical applications

P Goswami - 2020 - books.google.com
Bioanalytical science and its technological subdomain, biosensors, are ever-evolving
subjects, striving for rapid improvement in terms of performance and expanding the target …

Impact of graphene quantum capacitance on transport spectroscopy

K Takase, S Tanabe, S Sasaki, H Hibino… - Physical Review B …, 2012 - APS
We demonstrate experimentally that graphene quantum capacitance C q can have a strong
impact on transport spectroscopy through the interplay with nearby charge reservoirs. The …

Reservoir model for two‐dimensional electron gases in quantizing magnetic fields: A review

W Zawadzki, A Raymond, M Kubisa - physica status solidi (b), 2014 - Wiley Online Library
We collect and review works which treat two‐dimensional electron gases (2DEGs) in
quantum wells (QWs, mostly GaAs/GaAlAs heterostructures) in the presence of quantizing …