On the nature of majority and minority traps in β-Ga2O3: A review
In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
On the origin of the yellow luminescence band in GaN
MA Reshchikov - physica status solidi (b), 2023 - Wiley Online Library
The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐
related luminescence in unintentionally doped GaN. The discovery of the mechanism …
related luminescence in unintentionally doped GaN. The discovery of the mechanism …
Lattice expansion in Rb-doped hybrid organic–inorganic perovskite crystals resulting in smaller band-gap and higher light-yield scintillators
Two-dimensional hybrid-organic–inorganic perovskite (2D-HOIP) lead bromide perovskite
crystals have demonstrated great potential as scintillators with high light yields and fast …
crystals have demonstrated great potential as scintillators with high light yields and fast …
Photoluminescence spectra of point defects in semiconductors: Validation of first-principles calculations
Optically and magnetically active point defects in semiconductors are interesting platforms
for the development of solid state quantum technologies. Their optical properties are usually …
for the development of solid state quantum technologies. Their optical properties are usually …
Reliability of commercial UVC LEDs: 2022 state-of-the-art
With this study, we report on the reliability of the most recent commercial UVC LED devices.
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
Dual nature of the acceptor in GaN: Evidence from photoluminescence
Experimental studies of Be-doped GaN by photoluminescence (PL) confirmed theoretical
predictions that the Be Ga acceptor in GaN has dual nature, namely a coexistence of a deep …
predictions that the Be Ga acceptor in GaN has dual nature, namely a coexistence of a deep …
Identity of the shallowest acceptor in GaN
The Be-related ultraviolet luminescence band with a maximum at about 3.38 eV in GaN: Be
is caused by the shallowest acceptor in GaN with the−/0 transition level at 0.113 eV above …
is caused by the shallowest acceptor in GaN with the−/0 transition level at 0.113 eV above …
Photoluminescence related to Ca in GaN
The Ca Ga acceptor in GaN was studied using photoluminescence (PL) experiments and
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Chemiresistive NH 3 detection at sub-zero temperatures by polypyrrole-loaded Sn 1− x Sb x O 2 nanocubes
Chemiresistive gas sensors operate mainly at high temperatures, primarily due to the need
of energy for surface adsorption–desorption of analytes. As a result, the operating …
of energy for surface adsorption–desorption of analytes. As a result, the operating …