Abstract Indium selenide (γ-In 2 Se 3) films were prepared using RF magnetron sputtering.
Influence of deposition time on structural, optical, morphological, and photoelectrochemical …

Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin
oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the …

Zinc sulfide (ZnS) thin films of different thickness were coated on glass substrates by the sol–
gel dip-coating technique. Thickness dependent structural and optical properties of the films …

The dynamics of changing phases of In x Se y thin film alloy grown on annealing of the
SELD films were analyzed. The thin film samples provide mixed phases of γ-In 2 Se 3, In 4 …

This article demonstrates the successful synthesis of indium selenide thin films by a spin
coating method in air using thiol-amine cosolvents. The synthesized films encountered a …

We report the nonlinear optical properties of solution-processed indium selenide thin films.
The films were synthesized by spin coating method at various annealing temperatures using …

Q switching was demonstrated in an Erbium-doped fiber laser by utilizing Indium Selenide
(In 2 Se 3)-PVA as a passive saturable absorber (SA). The In 2 Se 3 PVA thin film was …

In this study, we investigated the effect of RF sputtering power on the structural,
morphological, optical, and photodetector properties of γ-In2Se3 thin films. The In2Se3 films …

We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using
the radio frequency (RF)-magnetron sputtering method with optimized parameters. The …

In 2 Se 3 is one of the most significant n-type layered semiconductor belonging to III–VI
binary compound materials. In this paper, polycrystalline In 2 Se 3 films were obtained by …