Analytical expressions for numerical characterization of semiconductors per comparison with luminescence
MF Pereira - Materials, 2017 - mdpi.com
Luminescence is one of the most important characterisation tools of semiconductor materials
and devices. Recently, a very efficient analytical set of equations has been applied to …
and devices. Recently, a very efficient analytical set of equations has been applied to …
Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042
Two photoluminescence (PL) peaks were observed in temperature-dependent PL spectra of
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
Temperature Dependence of the Defect States in LWIR (100) and (111) B HgCdTe Epilayers for IR HOT Detectors
HgCdTe epilayers grown by chemical vapor deposition (MOCVD) on GaAs substrates
operating in the long-wave infrared range were characterized by the photoluminescence …
operating in the long-wave infrared range were characterized by the photoluminescence …
Multicolor emission from intermediate band semiconductor ZnO1−xSex
Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are
used to demonstrate a splitting of the valence band due to the band anticrossing interaction …
used to demonstrate a splitting of the valence band due to the band anticrossing interaction …
HgCdTe energy gap determination from photoluminescence and spectral response measurements
The temperature dependence of photoluminescence spectra has been studied for the
HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and …
HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and …
Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice
K Murawski, T Manyk, M Kopytko - Journal of Electronic Materials, 2023 - Springer
Photoluminescence (PL) is one of the commonly used methods to determine the energy gap
(E g) of semiconductors. In order to use it correctly, however, the shape of the PL peak must …
(E g) of semiconductors. In order to use it correctly, however, the shape of the PL peak must …
Effect of the Sb content and the n− and p− GaSb (100) substrates on the physical and chemical properties of InSbxAs1-x alloys for mid-infrared applications: Analysis …
Antimonide-based family holds the potential for develo** a new generation of mid-infrared
applications. Here, we report on the growth of InSb x As 1-x alloys on n− and p− type GaSb …
applications. Here, we report on the growth of InSb x As 1-x alloys on n− and p− type GaSb …
[HTML][HTML] Trap levels analysis in MWIR InAs/InAsSb T2SL photodiode
Mid-wave infrared (MWIR) photodiode with an InAs/InAsSb superlattice active layer was
characterized by the photoluminescence (PL), spectral response (SR) and deep level …
characterized by the photoluminescence (PL), spectral response (SR) and deep level …
Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP
BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …
Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate
operating in the long-wave infrared (LWIR) range was characterized using …
operating in the long-wave infrared (LWIR) range was characterized using …