High-performance nonpolar a-plane GaN-based metal–semiconductor–metal (MSM)
ultraviolet (UV) photo-detectors are fabricated based on high-quality nonpolar a-plane GaN …

The non-polar a-plane AlGaN epitaxial layer with an Al composition as high as 0.69 and
enhanced structural and optical properties was successfully grown by metal-organic …

The effects of the insertion of MgN layer on the surface morphology, crystalline quality, and
optical properties of the semi-polar (11 2) plane Al 0.62 Ga 0.38 N films was studied …

High quality semi-polar (11 2¯ 2) plane AlGaN-based multiple quantum wells (MQWs) were
successfully grown on (10 1¯ 0) m-plane sapphire substrates with metal-organic chemical …

The Mg-delta-do** technique was employed in the epitaxial growth of the nonpolar a-
plane p-AlGaN films on semi-polar r-plane sapphire substrates by metal organic chemical …

The non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with excellent electrical
conduction were achieved on r-plane sapphire substrates via metal organic chemical vapor …

In this article, the effect of ammonia (NH 3) flow-modulation on the crystalline quality and
morphology of the nonpolar a-plane AlGaN epilayer grown on the r-plane sapphire …

The nonpolar a-plane p-Al x Ga 1-x N/GaN superlattices (SLs) were successfully grown with
metal organic chemical vapor deposition technology. The surface morphology, carrier …

The non-polar a-AlGaN epitaxial film was successfully grown on the semi-polar r-sapphire
substrate by metal-organic chemical vapor deposition technique. An Al-composition-graded …

Abstract Nonpolar Si-doped AlGaN with high electron concentration (EC) and superior
surface morphology (SM) layers were successfully grown on r-plane sapphire substrates for …