Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric
polarization, which offers significant promise for nonvolatile memories. In particular …

Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …

We present a phase-field simulation framework for ferroelectric (FE)-FET which captures
multi-domain effects by self-consistently solving 2D time-dependent Ginzburg-Landau …

The ferroelectric negative capacitance (NC) draws a great deal of attention for low‐power
negative capacitance field‐effect transistors (NCFET) and NC capacitors. The fabrication of …

Approximate computing is established as a design alternative to improve the energy
requirements of a vast number of applications, leveraging their intrinsic error tolerance …

The energy efficiency of digital computing is approaching practical and fundamental limits
since the operating voltages of transistors cannot be reduced much further. Negative …

In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its
electrical characteristics are investigated using TCAD device and mixed-mode simulations …