Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

Q Li, F Liu, S Hu, H Song, S Yang, H Jiang… - Nature …, 2022‏ - nature.com
Understanding thermal transport across metal/semiconductor interfaces is crucial for the
heat dissipation of electronics. The dominant heat carriers in non-metals, phonons, are …

Thermoelectric properties of InN graphene-like nanosheet: A first principle study

M Yeganeh, F Kafi, A Boochani - Superlattices and Microstructures, 2020‏ - Elsevier
In this work, the electronic and thermoelectric properties of the graphene-like monolayer of
InN were investigated by utilizing Wien2k and BoltzTrap codes considering PBE-GGA and …

Understanding and eliminating artifact signals from diffusely scattered pump beam in measurements of rough samples by time-domain thermoreflectance (TDTR)

B Sun, YK Koh - Review of Scientific Instruments, 2016‏ - pubs.aip.org
Time-domain thermoreflectance (TDTR) is a pump-probe technique frequently applied to
measure the thermal transport properties of bulk materials, nanostructures, and interfaces …

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

S Zhang, B Liu, F Ren, Y Yin, Y Wang, Z Chen, B Jiang… - Small, 2021‏ - Wiley Online Library
The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐
rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation …

Phonon thermal conductivity of scandium nitride for thermoelectrics from first-principles calculations and thin-film growth

S Kerdsongpanya, O Hellman, B Sun, YK Koh, J Lu… - Physical Review B, 2017‏ - APS
The knowledge of lattice thermal conductivity of materials under realistic conditions is vitally
important since many modern technologies require either high or low thermal conductivity …

High power efficiency nitrides thermoelectric device

Y Yan, S Zhang, Q Ma, Z Wang, T Feng, Q Chen, B Shi… - Nano Energy, 2022‏ - Elsevier
III-Nitrides, especially InGaN, are promising for high-efficiency thermoelectric (TE)
components operating at high temperatures (HTs), playing a critical role in the recovery of …

Effect of the alloyed interlayer on the thermal conductance of Al/GaN interface

Q Li, F Liu, Y Liu, T Wang, X Wang, B Sun - Journal of Applied Physics, 2023‏ - pubs.aip.org
Understanding the interfacial phonon transport is essential for optimizing the thermal
management of microelectronics, especially for high energy density devices. Some …

Anisotropic thermal conductivity of AlGaN/GaN superlattices

A Filatova-Zalewska, Z Litwicki, K Moszak… - …, 2020‏ - iopscience.iop.org
High thermal conductivity is an important parameter for nitride-based power electronic and
deep-UV light emitters. Especially in the latter case short period superlattices and …

Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer

S Lai, Q Li, H Long, L Ying, Z Zheng, B Zhang - Superlattices and …, 2021‏ - Elsevier
The optical properties of green InGaN/GaN multiple quantum wells (MQWs) can be greatly
affected by the large lattice mismatch between the GaN barrier and the InGaN quantum well …

Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer

S Yang, H Song, Y Peng, L Zhao, Y Tong, F Kang… - Nano Research, 2021‏ - Springer
Achieving high interface thermal conductance is one of the biggest challenges in the
nanoscale heat transport of GaN-based devices such as light emitting diodes (LEDs), and …