Recent advances in diamond power semiconductor devices
H Umezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …
expected to be employed in next-generation power electronic devices. Progress in epitaxial …
Optoelectronic diamond: growth, properties, and photodetection applications
Deep ultraviolet photodetectors have attracted much attention due to their wide applications
in the industrial, military, biological and environmental fields. Diamond has a variety of …
in the industrial, military, biological and environmental fields. Diamond has a variety of …
Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications
Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical
and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most …
and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most …
Hall hole mobility in boron-doped homoepitaxial diamond
Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been
investigated in the temperature range of 100–900 K, both experimentally and theoretically …
investigated in the temperature range of 100–900 K, both experimentally and theoretically …
High hole mobility in boron doped diamond for power device applications
PN Volpe, J Pernot, P Muret, F Omnès - Applied Physics Letters, 2009 - pubs.aip.org
Low boron doped homoepitaxial diamond layers were grown on Ib (100) diamond
substrates with oxygen added to the gas mixture. The acceptor density of the samples has …
substrates with oxygen added to the gas mixture. The acceptor density of the samples has …
Nitrogen concentration control during diamond growth for NV− centre formation
Negatively charged nitrogen-vacancy (NV−) centres formed in diamond crystals are point
defects that have potential applications in various quantum devices such as highly sensitive …
defects that have potential applications in various quantum devices such as highly sensitive …
Phonon-and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison
Diamond and cBN are two of the most promising ultra-wide bandgap semiconductors for
applications in high-power high-frequency electronic devices. Despite extensive studies on …
applications in high-power high-frequency electronic devices. Despite extensive studies on …
High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates
The development of diamond power electronic devices based on p–n junctions strongly
relies on the ability to achieve efficient n-type do** which has so far been the limiting …
relies on the ability to achieve efficient n-type do** which has so far been the limiting …
Do** and interface of homoepitaxial diamond for electronic applications
Diamond has been attracting the attention of many researchers because of its potential for
new applications such as in quantum devices and power electronics. These applications are …
new applications such as in quantum devices and power electronics. These applications are …
Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
Boron doped diamond layers have been grown on (110) single crystal diamond substrates
with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed …
with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed …