Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
High-voltage SiC power devices for improved energy efficiency
T Kimoto - Proceedings of the Japan Academy, Series B, 2022 - jstage.jst.go.jp
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
[HTML][HTML] Single crystal diamond wafers for high power electronics
S Shikata - Diamond and Related Materials, 2016 - Elsevier
According to international energy proposal, about 25% of the total CO2 reduction should
come from “end use efficiency”. Hence, low loss power devices are an important technology …
come from “end use efficiency”. Hence, low loss power devices are an important technology …
Evolving and emerging applications of power electronics in systems
JG Kassakian, TM Jahns - … of Emerging and Selected Topics in …, 2013 - ieeexplore.ieee.org
The continuing trend toward greater electrification and control of functions in consumer,
commercial, industrial, transportation, and even medical applications promises a dynamic …
commercial, industrial, transportation, and even medical applications promises a dynamic …
SiC and GaN devices–wide bandgap is not all the same
N Kaminski, O Hilt - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
[LIBRO][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
[HTML][HTML] Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
We report on record low free carrier concentration values in metalorganic chemical vapor
deposition (MOCVD) grown β-Ga 2 O 3 by using N 2 O for oxidation. Contrary to the pure …
deposition (MOCVD) grown β-Ga 2 O 3 by using N 2 O for oxidation. Contrary to the pure …