III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs
The efficiency of conventional quantum well light-emitting diodes (LEDs) decreases
drastically with reducing areal size. Here we show that such a critical size scaling issue of …
drastically with reducing areal size. Here we show that such a critical size scaling issue of …
Highly responsive switchable broadband DUV‐NIR photodetector and tunable emitter enabled by uniform and vertically grown III–V nanowire on silicon substrate for …
Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties …
Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity
Interface engineering in heterostructures at the atomic scale has been a central research
focus of nanoscale and quantum material science. Despite its paramount importance, the …
focus of nanoscale and quantum material science. Despite its paramount importance, the …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
[HTML][HTML] An AlGaN tunnel junction light emitting diode operating at 255 nm
We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV)
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip
light emitting diode has driven their expansion in self-emissive displays, from micro …
light emitting diode has driven their expansion in self-emissive displays, from micro …