Silicon has long been established as the material of choice for the microelectronics industry.
This is not yet true in photonics, where the limited degrees of freedom in material design …

In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

The metal-assisted etching direction of Si (110) substrates was found to be dependent upon
the morphology of the deposited metal catalyst. The etching direction of a Si (110) substrate …

Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic
and photoelectronic devices has stagnated in the past decade. During a typical catalyst …

Silicon nanowire (SiNW) ensembles with vertical and zigzag architectures have been
realized using wet chemical etching of bulk silicon wafers (p-Si (111) and p-Si (100)) with a …

Semiconductor nanowires have demonstrated fascinating properties with applications in a
wide range of fields, including energy and information technologies. Particularly, increasing …

The analysis of chemical and electronic states in complex and nanostructured material
systems requires electron spectroscopy to be carried out with nanometer lateral resolution …

The design and applications of an instrument for imaging X-ray photoelectron spectroscopy
(XPS) are reviewed. The instrument is based on a photoelectron microscope and a double …

To fabricate and qualify nanodevices, characterization tools must be developed to provide a
large panel of information over spatial scales spanning from the millimeter down to the …

Herein, we describe the growth of Si nanowires (NWs) in the vapor phase of an organic
solvent medium on various substrates (Si, glass, and stainless steel) upon which an indium …