Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals

A Kumar, AM Biradar - Physical Review E—Statistical, Nonlinear, and Soft …, 2011 - APS
We present here the dielectric and electro-optical studies of cadmium telluride quantum dots
(CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the do** …

Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals

A Kumar, J Prakash, MT Khan, SK Dhawan… - Applied Physics …, 2010 - pubs.aip.org
A pronounced memory effect has been observed in cadmium telluride quantum dots (CdTe-
QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical …

Enhancing the photoluminescence of ferroelectric liquid crystal by do** with ZnS quantum dots

A Kumar, J Prakash, AD Deshmukh, D Haranath… - Applied Physics …, 2012 - pubs.aip.org
We report the enhancement in photoluminescence (PL) intensity and shift in spectral energy
band of ferroelectric liquid crystal (FLC) doped with ZnS quantum dots (QDs). The emission …

CdSe quantum dot-dispersed DOBAMBC: an electro-optical study

SK Gupta, DP Singh, PK Tripathi, R Manohar… - Liquid …, 2013 - Taylor & Francis
Cadmium selenide quantum dot (CdSe QD) has been used as a dopant in ferroelectric
liquid crystal (FLC) 2-methylbutyl 4-(4-decyloxybenzylideneamino) cinnamate (DOBAMBC) …

Absorption and transport properties of Si rich oxide layers annealed at various temperatures

D Nesheva, N Nedev, Z Levi… - Semiconductor …, 2008 - iopscience.iop.org
Thin films of SiO x (x= 1.15, d= 1 and 2 µm), deposited by thermal vacuum evaporation of
SiO on n-and p-type crystalline Si or quartz substrates, and then furnace annealed at 250 …

Microstructural characterization of thin SiOx films obtained by physical vapor deposition

MA Curiel, N Nedev, D Nesheva, J Soares… - Materials Science and …, 2010 - Elsevier
X-ray diffraction and reflectivity, X-ray photoelectron spectroscopy and spectroscopic
ellipsometry were applied to study the initial composition, thickness, lattice structure and …

Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters

N Nedev, E Manolov, D Nesheva, K Krezhov… - Sensor …, 2012 - ingentaconnect.com
MOS structures containing silicon nanocrystals in the gate dielectric have been tested as
dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with …

Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature

J Paz, N Nedev, D Nesheva, M Curiel… - Journal of Materials …, 2020 - Springer
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …

Silicon oxide films containing amorphous or crystalline silicon nanodots for device applications

D Nesheva, N Nedev, M Curiel, I Bineva… - Quantum Dots–A …, 2012 - books.google.com
Тhe impressive recent growth of the portable systems market (mobile PC, MP3 audio player,
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …

Charge trap** properties and retention time in amorphous SiGe/SiO2 nanolayers

EMF Vieira, R Diaz, J Grisolia, A Parisini… - Journal of Physics D …, 2013 - iopscience.iop.org
In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS)
capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded …