Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals
A Kumar, AM Biradar - Physical Review E—Statistical, Nonlinear, and Soft …, 2011 - APS
We present here the dielectric and electro-optical studies of cadmium telluride quantum dots
(CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the do** …
(CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the do** …
Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals
A pronounced memory effect has been observed in cadmium telluride quantum dots (CdTe-
QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical …
QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical …
Enhancing the photoluminescence of ferroelectric liquid crystal by do** with ZnS quantum dots
We report the enhancement in photoluminescence (PL) intensity and shift in spectral energy
band of ferroelectric liquid crystal (FLC) doped with ZnS quantum dots (QDs). The emission …
band of ferroelectric liquid crystal (FLC) doped with ZnS quantum dots (QDs). The emission …
CdSe quantum dot-dispersed DOBAMBC: an electro-optical study
Cadmium selenide quantum dot (CdSe QD) has been used as a dopant in ferroelectric
liquid crystal (FLC) 2-methylbutyl 4-(4-decyloxybenzylideneamino) cinnamate (DOBAMBC) …
liquid crystal (FLC) 2-methylbutyl 4-(4-decyloxybenzylideneamino) cinnamate (DOBAMBC) …
Absorption and transport properties of Si rich oxide layers annealed at various temperatures
Thin films of SiO x (x= 1.15, d= 1 and 2 µm), deposited by thermal vacuum evaporation of
SiO on n-and p-type crystalline Si or quartz substrates, and then furnace annealed at 250 …
SiO on n-and p-type crystalline Si or quartz substrates, and then furnace annealed at 250 …
Microstructural characterization of thin SiOx films obtained by physical vapor deposition
X-ray diffraction and reflectivity, X-ray photoelectron spectroscopy and spectroscopic
ellipsometry were applied to study the initial composition, thickness, lattice structure and …
ellipsometry were applied to study the initial composition, thickness, lattice structure and …
Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters
MOS structures containing silicon nanocrystals in the gate dielectric have been tested as
dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with …
dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with …
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
Silicon oxide films containing amorphous or crystalline silicon nanodots for device applications
Тhe impressive recent growth of the portable systems market (mobile PC, MP3 audio player,
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
Charge trap** properties and retention time in amorphous SiGe/SiO2 nanolayers
In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS)
capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded …
capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded …