High-pressure chemistry of nitride-based materials
Besides temperature at one atmosphere, the applied pressure is another important
parameter for influencing and controlling reaction pathways and final reaction products. This …
parameter for influencing and controlling reaction pathways and final reaction products. This …
Do** of III-nitride materials
In this review paper we will report the current state of research regarding the do** of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
[HTML][HTML] The Calphad method and its role in material and process development
UR Kattner - Tecnologia em metalurgia, materiais e mineracao, 2016 - ncbi.nlm.nih.gov
Successful design of materials and manufacturing processes requires the availability of
reliable materials data. Commercial alloys usually contain a large number of elements, and …
reliable materials data. Commercial alloys usually contain a large number of elements, and …
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
No reliable results were reported up-to-date on electrical activation of Mg implanted GaN
without co-do** with other ions. The main reason of the poor ion-implanted activation in …
without co-do** with other ions. The main reason of the poor ion-implanted activation in …
Temperature dependence of the thermal expansion of GaN
C Roder, S Einfeldt, S Figge, D Hommel - Physical Review B—Condensed …, 2005 - APS
The thermal expansion of hexagonal GaN bulk crystals was studied in an extended
temperature range from 12 to 1025 K. The lattice parameters a and c were measured by …
temperature range from 12 to 1025 K. The lattice parameters a and c were measured by …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron
beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg …
beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg …
The role of Si during the growth of GaN micro-and nanorods
C Tessarek, M Heilmann, E Butzen, A Haab… - Crystal growth & …, 2014 - ACS Publications
The role of Si during the metal–organic vapor phase epitaxy of GaN rods is investigated.
Already a small amount of Si strongly enhances the vertical growth of GaN. Reactive ion …
Already a small amount of Si strongly enhances the vertical growth of GaN. Reactive ion …
Symmetric multicycle rapid thermal annealing: Enhanced activation of implanted dopants in GaN
Selectively activated p-type regions are necessary for many electronic devices that require
planar processing. The standard process of implanting p-type dopants, such as Mg, in GaN …
planar processing. The standard process of implanting p-type dopants, such as Mg, in GaN …
In Situ XRD Studies of ZnO/GaN Mixtures at High Pressure and High Temperature: Synthesis of Zn-Rich (Ga1−xZnx)(N1−xOx) Photocatalysts
H Chen, L Wang, J Bai, JC Hanson… - The Journal of …, 2010 - ACS Publications
The high-pressure, high-temperature conditions for the synthesis of Zn-rich (Ga1− x Zn
x)(N1− x O x) solid solutions from mixtures of ZnO/GaN were explored using synchrotron …
x)(N1− x O x) solid solutions from mixtures of ZnO/GaN were explored using synchrotron …