An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

In recent years, 2D oxides have attracted considerable attention due to their novel physical
properties and excellent stability. With the efforts of researchers, significant progress has …

Hg2+ ions are one of the highly poisonous heavy metal ions in the environment, so it is
urgent to develop rapid and sensitive detection platforms for detecting Hg2+ ions. In this …

The incorporation of an inorganic hole transport material (HTM) with high hole mobility and
matched energetics at the back interface of perovskite/carbon plays a major role in …

Atomically thin oxide semiconductors are significantly expected for next-generation cost-
effective, energy-efficient electronics. A high-performance p-channel oxide thin-film …

Abstract Cuprous oxide (Cu 2 O), a far-reaching photon-absorption layer, is active in the field
of solar cells and sensors. In this work, the Cu 2 O films prepared at low temperature by …

This work demonstrates p-type SnO thin film transistors, where the SnO active layers were
deposited with atomic layer deposition (ALD) using the Sn (II) alkoxide precursor, Sn (II) bis …